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HiPerFASTTM IGBT
IXGH 24N60B
VCES IC25 VCE(sat) tfi
= = = =
600 48 2.3 80
V A V ns
Preliminary Data
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 Clamped inductive load TC = 25C
Maximum Ratings 600 600 20 30 48 24 96 ICM = 48 @ 0.8 VCES 150 -55 ... +150 150 -55 ... +150 300 1.13/10 6 V V V V A A A A W C C C C Nm/lb.in. g
TO-247 AD
C (TAB) G C E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Features * International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD * High frequency IGBT * High current handling capability * 3rd generation HDMOSTM process * MOS Gate turn-on - drive simplicity
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3)
Applications * * * * * AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 TJ = 25C TJ = 125C 5.5 200 1 100 2.3 V V A mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 A, VGE = 0 V = 250 A, VCE = VGE
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
Advantages * High power density * Switching speed for high frequency applications * Easy to mount with 1 screw (insulated mounting screw hole)
(c) 2002 IXYS All rights reserved
95584C(12/02)
IXGH 24N60B
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 9 13 1500 VCE = 25 V, VGE = 0 V, f = 1 MHz 175 40 90 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 11 30 Inductive load, TJ = 25C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 24N60B Inductive load, TJ = 125C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 10 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 25 15 0.6 150 80 0.80 25 15 0.8 250 100 24N60B 1.4 200 150 120 15 40 S
P
TO-247 AD Outline
gfs Cies Coes Cres Qg Qge Qgc td(on) tri Eon td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 %
pF pF pF nC nC nC ns ns mJ ns ns mJ ns ns mJ ns ns mJ 0.83 K/W TO-247 SMD Outline
e
Dim.
Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 2.87 3.12 b2 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
0.25
K/W
Min. Recommended Footprint
(Dimensions in inches and (mm))
1. Gate 2. Collector Dim. A A1 A2 b b1 C D E e L L1 L2 L3 L4 OP Q R S
3. Emitter 4. Collector Inches Min. Max. .190 .090 .075 .045 .075 .024 .819 .620 .215 .193 .106 .083 .00 .075 .140 .220 .170 .242 .205 .100 .085 .055 .084 .031 .840 .635 BSC .201 .114 .091 .004 .083 .144 .244 .190 BSC
Millimeter Min. Max. 4.83 2.29 1.91 1.14 1.91 0.61 20.80 15.75 5.45 4.90 2.70 2.10 0.00 1.90 3.55 5.59 4.32 6.15 5.21 2.54 2.16 1.40 2.13 0.80 21.34 16.13 BSC 5.10 2.90 2.30 0.10 2.10 3.65 6.20 4.83 BSC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
IXGH24N60B
50
TJ = 125C
VGE = 15V
40
VGE = 13V 11V 9V
7V
200
TJ = 25C
VGE = 15V 13V
160
IC - Amperes
IC - Amperes
30 20 10
120 80 40
11V
9V
7V 5V
5V
0
0
1
2
3
4
5
0
0
2
4
6
8
10
VCE - Volts
VCE - Volts
Fig. 1. Saturation Voltage Characteristics
50
TJ = 125C
Fig. 2. Extended Output Characteristics
1.6
VGE = 15V IC = 48A
IC - Amperes
7V
VCE (sat) - Normalized
40 30 20 10 0
VGE = 15V 13V 11V
9V
1.4 1.2
IC = 24A
1.0
IC = 12A
5V
0.8 0.6 25
0
1
2
3
4
5
50
75
100
125
150
VCE - Volts
TJ - Degrees C
Fig. 3. Saturation Voltage Characteristics
100
VCE = 10V
Fig. 4. Temperature Dependence of VCE(sat)
1.2
VGE(th) IC = 3mA
BV/VGE(th) - Normalized
80
1.1 1.0 0.9 0.8 0.7 -50
IC - Amperes
60 40
TJ = 125C
BVCES IC = 3mA
20
TJ = 25C
0
3
4
5
6
7
8
9
10
11
12
-25
0
25
50
75
100 125 150
Fig. 5. Admittance Curves
Fig. 6. Temperature Dependence of BVDSS & VGE(th)
(c) 2002 IXYS All rights reserved
IXGH 24N60B
2.5
TJ = 125C
2.5 24N60B
E(ON) / E(OFF) - milliJoules
2.0 1.5
E(ON) / E(OFF) - milliJoules
RG = 10 E(OFF)
E(ON)
TJ = 125C IC = 24A
24N60B
2.0 1.5 1.0
E(ON) E(OFF)
1.0 0.5 0.0
0 10 20 30 40 50
0.5 0.0
0
10
20
30
40
50
IC - Amperes
RG - Ohms
Fig. 7. Dependence of tfi and EOFF on IC.
15 12
IC = 24A VCE = 300V
Fig. 8. Dependence of tfi and EOFF on RG.
100
100
0B 24N5 0B 24N6
VGE - Volts
9 6 3 0 0 20 40 60 80 100
IC - Amperes
10
IC - Amperes
10
TJ = 125C T = 125C R G = 1010 RG = dV /dT < < 5V/ns dV/dt 5V /ns
J
1
1
0.1 0
0.1 0
100
100
200
200
300
300
400
400
500
500
600
600
Qg - nanocoulombs
V - - olts V C ECE V Volts
Fig. 9. Gate Charge
1
D=0.5 D=0.2 D=0.1 D=0.05 D=0.02
F ig . 1 0 . Turn-o ff S a fe Operating Area a Fig. 10. Turn-off Safe O p e ra ting A re
RthJC - K/W
0.1
0.01
D=0.01
Single pulse
D = Duty Cycle
0.001 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Fig. 11. Transient Thermal Resistance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1

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